Device Simulator Calibration for Quartermicron CMOS Devices
نویسنده
چکیده
We present the calibration of a device simulator for a 0.25 ftm CMOS technology using response surface methodology. For this process several measurements for different gate lengths (0.2-4.0 /jm) were made. Care was taken to eliminate the statistical variations typical to sub-micron devices by measuring several chips on the the same wafer and taking an average sample. The simulations carried out with the calibrated parameters show an error smaller than 2.4% for both the long-channel and the short-channel device.
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تاریخ انتشار 2007